Compact vector-matrix multiplier system employing electron trapping materials

ABSTRACT

A vector-matrix multiplier in which a matrix is stored in an electron trapping material by exposing the material to visible light passed through a liquid crystal device, which acts as a mask. The visible light raises electrons in the electron trapping material to a higher energy level at the exposed locations. Infrared light is then passed through the liquid crystal device to form an input vector, which is projected onto the electron trapping material. The infrared light releases electrons from the higher energy level, resulting in emission of a pattern of visible light. The emission of visible light from the electron trapping material forms an output representing the product of the input vector and the matrix.

This is a continuation-in-part of U S. application Ser. No. 07/419,479,filed Oct. 10, 1989, now U.S. Pat. No. 5,029,253, entitled "SpatialLight Modulator Using Electron Trapping Materials", the disclosure ofwhich is herein incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to optical signal processing usingelectron trapping materials and, more specifically, to the use ofelectron trapping materials in a compact optical vector-matrixmultiplier system.

2. Description of the Related Art

The capabilities of electron trapping materials having been demonstratedin various disciplines of optical signal processing. For example, theapplication of electron trapping materials to parallel Boolean logic hasbeen reported by S. Jutamulia, G. M. Storti, J. Lindmayer, and W.Seiderman in "Application of Electron trapping (ET) Materials to OpticalParallel Logic Processing," Proc. SPIE, 1151, 83, 1989. The use ofelectron trapping materials in memory devices has been demonstrated byS. Jutamulia, J. Lindmayer, and G. Storti in "Optical PatternRecognition and Associative Memory Using Electron trapping Materials,"Proc. SPIE 1053, 67, 1989. Recently, the capabilities of electrontrapping materials applied to Hopfield type neural networks has beendiscussed by S. Jutamulia, G. M. Storti, J. Lindmayer, W. Seiderman in"Optical Neural Nelectron trappingwork Digital Multi-Value Processorwith Learning Capability Using Electron trapping Materials," Proc. SPIE1215, 457, 1990.

A neural network model is basically represented by a matrix-vectormultiplication. J. J. Hopfield, "Neural Networks and Physical Systemswith Emergent Collective Computational Abilities", Proc. Natl. Acad.Sci. USA, 79, 2554-2558 (1982). Vector-matrix multiplication can beperformed optically by converting the vector into matrix form, formingan image of that matrix, and optically multiplying that image with theimage of a vector. The conversion of a vector into a matrix isaccomplished by the following interconnection matri T_(ij) : ##EQU1##where V_(i) and V_(j) are the ith and jth elements of the vector, andwhere i and j represent the row and column of the matrix elements.

For example, the vector (1,0,0,1,1) will convert into the matrix:##EQU2##

Electron trapping materials are useful in performing opticalmultiplications. As described in A. D. McAulay, "Optical OrthogonalNeural Network Associative Memory with Luminescent RebroadcastingDevices," Int. Joint Conf Neu. Net. IEEE - 89CH2765 - G, Volume III,483-485 (1985), multiplication can be performed by writing one image,say A, onto an electron trapping material using visible light, and thenreading with IR light in a pattern representing the second image B Theoutput luminescent at each pixel position is proportional to the analogproduct of the read intensity at that pixel and the stored value at thatpixel

While the prior techniques for optical vector-matrix multiplication suchas disclosed by McAulay have been successfully demonstrated, they usefan-out and fan-in lenses and thus require precise optical alignment andtake up a considerable amount of space. Accordingly, opticalvector-matrix multiplication has been limited to laboratory bench topsystems Thus, a need exists for a vector-matrix multiplier which iscompact, rugged and which can actually be implemented in an opticalcomputer

SUMMARY OF THE INVENTION

A primary object of the present invention is therefore to provide acompact and versatile vector-matrix multiplier employing electrontrapping materials.

Another object of the invention is to provide a rugged vector-matrixmultiplier that does not use lenses in the focusing of light within thesystem and thus does not have the size and sensitivity drawbacksheretofore found in other similar multiplier systems.

A further object of the present invention is to provide an associativememory using a compact vector-matrix multiplier structure.

A still further object of the invention is to provide a compactvector-matrix multiplier/associative memory which can be built as a chipfor use in an optical computer

These and other objects of the invention are achieved by a method ofoptically multiplying a vector and a matrix by first passing visiblelight through a liquid crystal device to form a visible light image of amatrix and exposing an electron trapping material to the visible lightimage, whereby electrons in the electron trapping material at locationscorresponding to the visible light image are raised to a higher energylevel where they are trapped, resulting in the storage of the matrix inthe electron trapping material in the form of a density pattern oftrapped electrons in the higher energy level Next, infrared light ispassed through the liquid crystal device to form a two dimensionalinfrared image of a vector, and the electron trapping material isexposed to the infrared image of the vector, the infrared lightreleasing the trapped electrons from the higher energy level atlocations corresponding to the infrared image, resulting in an emissionof visible light from the electron trapping material at those locations.The emission of visible light from the electron trapping material isdirected to a visible light detector to obtain an electrical outputrepresenting the product of said vector and said matrix

The matrix stored by the electron trapping material is preferably formedof binary elements of 0, +1 and -1, and a bias is initially applied tothe electron trapping material by exposing said electron trappingmaterial to a uniform application of blue light. Thereafter, the matrixelements of +1 are written with blue light into the electron trappingmaterial and the matrix elements of -1 are written with infrared lightinto the electron trapping material

The electron trapping material is capable of storing multiple matricesand can be used as an associative memory by feeding back the output fromthe detector and reapplying it an input vector.

In an alternative method for optically multiplying a vector and amatrix, the electron trapping material is initially flooded with visiblelight to uniformly charge said material by raising electrons in saidmaterial to a higher energy level, where they are trapped Then theelectron trapping material is subjected to infrared light at selectedlocations such that electrons at the selected locations are releasedfrom their traps and fall back down to a lower energy level, while theremaining locations of said material not exposed to said infrared lightremain charged with trapped electrons in a pattern corresponding to amatrix to be stored Next, the electron trapping material is subjected toa two-dimensional image of a vector in the form of infrared light, theinfrared light releasing trapped electrons from the higher energy level,resulting in an emission of a pattern of visible light from the electrontrapping material Finally, the emission of visible light from theelectron trapping material is directed to a visible light detector toobtain an electrical output representing the product of the vector andthe matrix.

The first method is implemented by a vector-matrix multiplier systemthat includes (1) a visible light and near infrared light source; (2) aliquid crystal television which operates either under control of acomputer or in conjunction with visible and infrared polarizers andvisible and infrared analyzers to provide appropriate masking of thelight from the light source for creating images of the vectors andmatrices to be multiplied; (3) a 2-dimensional screen of electrontrapping material; (4) an array of linear detectors and thresholders;and (5) for use of the system as an associative memory, a feedbacksystem that recirculates the output as a input for iterativevector-matrix multiplication.

The second method is preferably implemented by a system that includes ana visible light source and an infrared diode array in place of elements(1) and (2) above.

The entire system is preferably formed into a multilayer optoelectronicchip.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the present inventionwill become apparent when the following detailed description is read inconjunction with the accompanying drawings

FIG. 1 shows the excitation, activation and emission spectra of atypical electron trapping material utilized in the present invention.

FIG. 2 shows the principles of operation of the electron trappingmaterial used in the present invention.

FIG. 3 shows the basic structure of the electron trapping screen.

FIG. 4 illustrates an optical setup for the vector-matrix multipliersystem employing an electron trapping screen in accordance with thepresent invention.

FIG. 5 shows the operation of the liquid crystal TV in performing XORand XNOR functions

FIG. 6 shows how the XOR are XNOR functions properly implement theHopfield interconnection matrix.

FIG. 7 shows the configuration of the polarizer and analyzer to obtainthe required zero diagonal matrix.

FIGS. 8 and 9 show the 2D flat illuminator used in the invention.

FIG. 10 shows the layering of the components of the invention to form amultilayer optoelectric chip.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

In view of the importance of electron trapping materials to the presentinvention, a brief review of their relevant characteristics, which aremore fully described in the cited patents, is appropriate.

A. Electron Trapping Materials

Electron trapping materials characteristically can emit different outputphotons which correlate spatially in intensity with input photons. Thepreferred electron trapping material of the present invention is formedof an alkaline earth metal sulfide base doped with rare earthimpurities. A number of different electron trapping materials have beendeveloped by the assignee of the present application. material formed ofa strontium sulfide base doped with samarium and europium (SrS:Sm,Eu).This material outputs orange light centered at 620 nm. Similarly, U.S.Pat. No. 4,842,960 discloses a material formed of a mixed strontiumsulfide/calcium sulfide base doped with samarium and europium/cerium(SrS/CaS:Sm,Eu/Ce) This material also emits orange light, but has a veryhigh efficiency and a brighter output than the material without calciumsulfide As shown in FIG. 1, the activation wavelength of this preferredSrS/CaS:Sm,Eu/Ce material is about 450 nm, its emission wavelength isorange (about 630 nm) and it stimulation wavelength is near-infrared.U.S Pat. No. 4,879,186 discloses a material formed of a calcium sulfidebase doped with samarium and europium (CaS Sm,Eu), which outputs redlight centered at 650 nm.

Each of the above electron trapping materials have electron traps withdepths of about 1.0 to 1.2 electron volts. Further details of thematerials and the processes for making the materials are set forth inthe disclosure of each of the above-referred U.S. patents, which areherein incorporated by reference.

Briefly, the mechanism for light emission of electron trapping materialscan be explained as follows, using the SrS:Sm,Eu material as an example,with reference to FIG. 2: Both ground and excited states of eachimpurity exist within the band gap of the wide-band-gap (approx. 4.4 eV)host material Short wavelength visible light (e.g., blue) exciteselectrons from the ground state (valence band G) to an excited state ofEu (communication band E), from whence the electrons transfer over toSm. The electrons remain in the ground state of Sm (trapping level T)for very long times However, subsequent exposure to IR light excites thetrapped electrons to the excited states of Sm, the electrons transfer tothe excited states of Eu and return to the ground state of Eu with theemission of orange/red light. By way of the above mode of operation, theelectron trapping materials can be used to store optical information inthe form of trapped electrons. This has been described by J. Lindmayer,P. Goldsmith, and C. Wrigley, in "Electronic Optical-Storage TechnologyApproaches Development phase", Laser Focus World, p. 119, Nov. 1989.

In addition to storage, electron trapping materials are capable ofperforming multiplication, addition, and subtraction within a dynamicrange over four orders of magnitude The orange/red emission intensity isproportional to the product of the blue write-in intensity and the IRreadout intensity. The addition and subtraction are performed byincreasing and decreasing the number of trapped electrons. Theseoperations are physically carried out by exposing the electron trappingmaterial to blue and IR light, respectively.

The physical structure of the electron trapping screen will now bedescribed in greater detail. As shown in FIG. 3 in verticalcross-section, screen 10 consists of a substrate 20 coated with anelectron trapping material 30. The substrate 20 may be any transparentmaterial such as glass, quartz or sapphire. The material 30 establishesa planar surface 16. An optical transparent coating 18 may encapsulatethe material 30 and substrate 20.

Material 30 is preferably deposited upon substrate 20 using thin filmtechniques, preferably by physical or chemical vapor deposition. Detailsconcerning the preferred thin film deposition process are set forth inthe present assignee's U.S. Pat. Nos. 4,830,875 and 4,915,982, which areherein incorporated by reference.

Referring now to FIG. 4, the vector-matrix multiplier system of thepresent invention consists of the hardware outside of the broken linesdesignated by reference numeral 40 The hardware within the broken linesis used for feedback if the system is to be used as an associativememory, described later

Vector-matrix system 40 consists of an electron trapping screen 10 and alight illuminator 42 on opposite sides of a liquid crystal TV 44. LCTV44 has separately controllable vertical electrodes 45 and horizontalelectrodes 46. A blue light polarizer 48 and an IR polarizer 50 aredisposed between illuminator 42 and LCTV 44. An IR analyzer 52 and blueanalyzer 54 are disposed between LCTV 44 and electron trapping screen10.

As mentioned previously, electron trapping layer 10 is charged withvisible light, and outputs visible light when stimulated by IR light.The visible light output from electron trapping layer 10 is detected bydetector array 56, and the electrical signals from detector array 56 aredifferentiated by an array of thresholders 58. The outputs fromthresholder array 58 is gated through output control 60 to paralleloutput 62, (or alternatively fed back to control LCTV 44 if the deviceis utilized as an associative memory, as described later).

Light illuminator 42, described in greater detail below, is controllableto output either blue light (for changing electron trapping layer 10) orIR light (for stimulating electron trapping layer 10). To store vectorsin electron trapping layer 10, illuminator 42 is controlled to outputblue light while the vertical and horizontal electrodes 45, 46 of LCTV 4are simultaneously controlled to from an appropriate mask so as tocreate a 2-D blue image of the vector on the electron trapping layer.The elements of the vector to be written into electron trapping layer 10are input electronically in parallel via parallel input 64 and inputcontrol 66, and operating in conjunction with display control 68 anddetermine the ON/OFF state of the electrodes of LCTV 44. The operationof parallel input 64, parallel output 62, display control 68 and lightilluminator 42 are synchronized by synch control 70.

The formation of images by LCTV 44 is now described in greater detail.If the potential on both the vertical and horizontal electrodes of LCTV44 at the location of a particular element is the same (i.e., if bothare at ground or both are at potential V), then a polarization rotationof 90° is effected by LCTV 44 On the other hand, if the potential onboth electrodes is opposite (i.e., if one is at ground and the other isat potential V), then the polarization angle of the incoming light isnot rotated. The net result, as shown in FIG. 5, taking into account therelative orientation of the polarizers 48, 50 and analyzers 52, 54 isthat an XNOR function is performed by LCTV 44 for blue light (V_(i) XNORV_(j)) and an XOR function is performed by LCTV 44 for IR light (V_(i)XNOR V_(j)), where V_(i) and V_(j) are the potentials applied to theLCTV vertical and horizontal electrodes. As shown in FIG. 6, thesefunctions properly implement the Hopfield equation (2V_(i) -1)(2V_(j)-1) for i±j.

There are two methods for obtaining a zero diagonal matrix i.e., M_(ij)=0, when i=j, which is required by the Hopfield matrix:

1. Since the IR mode performs XOR M_(ij) =0 for i=j is obtainedinherently. However, the blue mode performs XNOR that produces M_(ij) =1for i=j. To make M_(ij) =0 for i=j, the blue polarizer pair at theposition i=j must be parallel in order to perform XOR instead of XNOR.Thus, the blue analyzer must be made as shown in FIG. 7.

2. The second method is to subtract M_(ij) by 1 for i=j using IR lightHowever, this would be a sequential process, where is subtracted by 1for i=1 to i=n, one by one, because to subtract M₁₁ we have to assignV_(i=1) ≠V_(j=1) and V_(i)≠1 =V_(j)≠1. This is repeated until i=n. Thus,it takes n steps to zero the diagonal elements of a nxn matrix

Significantly, the blue polarizer 48 is transparent to IR, and the IRpolarizer 50 is transparent to blue Thus, the XNOR and XOR functions areperformed independently of one another, and the visible light elements(+1) and IR light elements (-1) can be written to the electron trappinglayer 10 sequentially or simultaneously.

When the matrix elements +1 are written with blue light into theelectron trapping layer, the number of trapped electrons at thoselocations are increased. Similarly, when the elements of -1 are writtenwith IR light into the electron trapping layer, the number of trappedelectrons at those locations are decreased A bias level is required toavoid the need for negative numbers of trapped electrons (a physicalimpossibility) in the electron trapping layer The bias level consistssimply of an initial application of uniform blue light across the entireelectron trapping screen, which evenly raises the number of trappedelectrons at all pixel locations Thereafter, the application of bluelight at a particular location will increase the number of trappedelectrons at that location, while the application of IR light willdecrease the number of trapped electrons at that location.

The preferred electron trapping material has a dynamic range of 2⁶ andthus is capable of storing up to six matrices (consisting of +1, 0, -1)simultaneously. Thus, for example, if all six matrices stored have a +1at a particular pixel location, that location would have the maximumlevel of trapped electrons, which could be detected with properthresholding upon read out with IR light.

The capability of storing multiple matrices in the electron trappinglayer allows the device to be used as an associative(content-addressable) memory. Thus, for example, if six vectors arestored in matrix form in the electron trapping layer and then an unknownvector is input into the electron trapping layer in the form of IRlight, the vector-matrix multiplication output of visible light from theelectron trapping layer will yield the vector that corresponds to theinput vector stored in the electron trapping layer. If the input vectoris close, but not identical to a stored vector, multiple iterations ofvector-matrix multiplication will be necessary to retrieve the correctvector stored in the electron trapping layer These iterations areperformed by feeding back the output (after proper thresholding) as aninput vector using the feedback lines 70 and feedback control 72 shownin FIG. 4. After about two or three iterations of vector-matrixmultiplication, the stored vector closest to the original inputtedvector will appear at the output of the system.

In lieu of using the polarizers/LCTV/analyzers set-up shown in FIG. 4,the XOR and XNOR functions can be performed automatically by a computerwith a video driver for displaying the appropriate mask pattern on theLCTV. Thus, the computer would, for example, determine the appropriatematrix representation for an input vector and, using graphics software,send the proper control signals to a video driver to display theappropriate mask pattern on LCTV 44 for writing the desired vector intothe electron trapping layer.

In another embodiment of the invention, the LCTV is replaced by a laserdiode array (coupled with a micro-lenslet array to obtain parallel lightoutput). The laser diode array is controllable to emit infrared light atselected locations. To use this device in the present invention, theelectron trapping material is initially flooded with blue light from theside so that all locations are fully charged. The matrix or matrices tobe stored in the electron trapping layer would then be written down withIR light using the laser diode array. Finally, the input vector would beapplied with IR light from laser diode array to produce the desiredvector-matrix multiplication.

The emission from the electron trapping layer 10 is detected by detectorarray 56 (whether a CCD, strip type silicon detector, or other type ofdetector). Then the electronic signal (which is in the matrix form) isintegrated in the horizontal direction. Each element of the horizontallyintegrated vector is individually thresholded by thresholds 58. If thedevice is being used as an associative memory, the thresholded vector ischecked to determine whether it has converged (i.e., checked to see ifit is the same with the previous loop) If it has converged, it is theoutput; otherwise it is fed back to the input port. The whole operationrequires a synchronization control 71.

FIG. 8 shows the 2D flat illuminator 42 utilized in the sytem of thepresent invention. To make a compact optoelectronic package, usualcollimating optics cannot be applied. It is important to note that onlyincoherent light is required. The flat illuminator 42 is based on awaveguide. A linear LED 76 or a filtered light source emits IR or bluelight. The emitted light is directed through a cylindrical lens 78 andinto the slab waveguide 80 (e.g., sapphire or glass). The light willpropagate in waveguide 80. However, one side of waveguide 80 isroughened such that the light can leave the waveguide. Light cannotleave waveguide 80 from the other side since it is polished and coatedwith a reflecting film. To produce a uniform illumination for both IRand blue, LEDs are arranged as shown in FIG. 9.

The whole system can be packaged to be a multilayer optoelectronic chipas shown in FIG. 10. In the preferred embodiment, the entire system ispreferably built as a macro-chip with approximate dimensions of 5×5×5cm³.

Although the present invention has been described in connection with apreferred embodiment thereof, many other variations and modificationsand other uses will now become apparent to those skilled in the artwithout departing from the scope of the invention. It is preferred,therefore, that the present invention not be limited by the specificdisclosure herein, but only by the appended claims.

What is claimed is:
 1. A method of optically multiplying a vector and amatrix, comprising the steps of:(a) passing visible light through aliquid crystal device to form a visible light image of a matrix andexposing an electron trapping material to said visible light image,whereby electrons in said electron trapping material at locationscorresponding to said visible light image are raised to a higher energylevel where they are trapped, resulting in the storage of said matrix insaid electron trapping material in the form of a density pattern oftrapped electrons in said higher energy level; (b) passing infraredlight through said liquid crystal device to form a two dimensionalinfrared image of a vector and exposing said electron trapping materialwith said infrared image of said vector, said infrared light releasingsaid trapped electrons from said higher energy level at locationscorresponding to said infrared image, resulting in an emission ofvisible light from said electron trapping material at those locations;and (c) directing said emission of visible light from said electrontrapping material to a visible light detector to obtain an electricaloutput representing the product of said vector and said matrix.
 2. Amethod as recited in claim 1, wherein the matrix is comprised of binaryelements of 0, +1 and -1, and a bias is initially applied to saidelectron trapping material by exposing said electron trapping materialto a uniform application of blue light, and wherein said matrix elementsof +1 are written with blue light into the electron trapping materialand matrix elements of -1 are written with infrared light into theelectron trapping material.
 3. A method as recited in claim 1, whereinmultiple matrices are stored in said electron trapping material and theoutput from said detector is fed back and reapplied as an input vector,such that an associative memory function is performed.
 4. A method foroptically multiplying a vector and a matrix, comprising the steps of:(a)flooding an electron trapping material with visible light to uniformlycharge said material by raising electrons in said material to a higherenergy level, where they are trapped; (b) subjecting said electrontrapping material to infrared light at selected locations such thatelectrons at the selected locations are released from their traps andfall back down to a lower energy level, while the remaining locations ofsaid, material not exposed to said infrared light remain charged withtrapped electrons in a pattern corresponding to a matrix to be stored;(c) subjecting said electron trapping material to a two-dimensionalimage of a vector in the form of infrared light, said infrared lightreleasing trapped electrons from said higher energy level, resulting inan emission of a pattern of visible light from said electron trappingmaterial; and (d) directing said emission of visible light from saidelectron trapping material to a visible light detector to obtain anelectrical output representing the product of said vector and saidmatrix.
 5. An apparatus for conducting vector-matrix multiplicationusing an electron trapping material, comprising:(a) a electron trappingmaterial for storing images in the form of a pattern of electronstrapped at a higher energy level, said electrons being raised to saidhigher energy level at which they are trapped upon activation byexposure to visible light, said electrons being released from saidhigher energy level upon stimulation by exposure to infrared light,resulting in the emission of visible light from said material atlocations at which electrons have been activated and stimulated; (b)illumination means for providing visible and infrared light for,respectively, activating and stimulating said electron trappingmaterial; (c) a liquid crystal device disposed between said illuminationmeans and said layer of electron trapping material for masking saidvisible light from said illumination means to form a pattern of visiblelight corresponding to a matrix to be stored in said electron trappingmaterial, and for masking said infrared light from said illuminationmeans to form a pattern of infrared light corresponding to atwo-dimensional image of a vector to be optically multiplied with saidmatrix stored in said electron trapping material; (d) control means forcontrolling said illumination means and said liquid crystal device so asto first expose said electron trapping material to a visible light imagecorresponding to the matrix to be stored, and then expose said electrontrapping material to an infrared light image corresponding to the vectorto be multiplied with said matrix; and (e) detector means for convertingthe said visible light outputted from said electron trapping materialinto an electrical output representing the product of said vector andsaid matrix
 6. An apparatus for conducting vector-matrix multiplicationas recited in claim 5, further comprising means for feeding back saidelectrical output as an input vector, such that said apparatus functionsas an associative memory.
 7. An apparatus for conducting vector-matrixmultiplication, comprising:(a) means for flooding an electron trappingmaterial with visible light to uniformly charge said material by raisingelectrons in said material to a higher energy level, where they aretrapped; (b) an infrared diode array comprising for(1) subjecting saidelectron trapping material to infrared light at selected locations suchthat electrons at the selected locations are released from their trapsand fall back down to a lower energ level, while the remaining locationsof said material not exposed to said infrared light remain charged withtrapped electrons in a pattern corresponding to a matrix to be stored;and (2) subjecting said electron trapping material to a two-dimensionalimage of a vector in the form of infrared light, said infrared lightreleasing trapped electrons from said higher energy level, resulting inan emission of a pattern of visible light from said electron trappingmaterial; and (c) means for detecting said emission of a pattern ofvisible light from said electron trapping material to obtain anelectrical output representing the product of said vector and saidmatrix